This paper analyzes the performance analysis of Gallium Nitride (GaN)-based H-bridge converters for high Power Conversion Systems (PCS) such as electric vehicle charging systems. The same analysis is extended to a Si-based H-bridge converter for a comparative study. The objective is to perform a loss analysis of the H-bridge converter. The loss analysis is carried out for the conduction and switching losses of the device, anti-parallel diodes and high frequency link transformer (HFL). The performance study is done for the GaN-based and Si-based H-bridge converters operating at high switching frequencies ranging up to 300 kHz. The performance metrics of the 1 kW GaN based H-bridge have been analyzed and simulation is performed using LTspice XVII software. To verify the results, a 0.91 kW prototype operating at a frequency of 100 kHz is presented with Port-1/Port-2 voltages of 230/120 V respectively.