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     2026:7/2

International Journal of Multidisciplinary Research and Growth Evaluation

ISSN: (Print) | 2582-7138 (Online) | Impact Factor: 9.54 | Open Access

Gallium doped ZnO -a promising plasmonic material in Sensors in IR and NIR frequency range

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Volume: 5 | Issue: 6 | Pages: 811-816

Subject: Physics

Country: India

DOI: https://doi.org/10.54660/.IJMRGE.2024.5.6.811-816

License: CC BY 4.0

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Abstract

This study aims to report the recent advances in the field of Sensors using Gallium doped ZnO as plasmonic material in IR and NIR frequency range with the help of MATLAB simulations. Here comparative study of resonance spectra of both annealed and as- deposited ZnO:Ga (GZO) with several thickness and angle of incidence are investigated. The films are highly transparent in visible –NIR ranges and gives better sensitivity to plasmonic resonance condition for below 100nm thickness.

How to Cite This Article

Sukla Rajak (2024). Gallium doped ZnO -a promising plasmonic material in Sensors in IR and NIR frequency range . International Journal of Multidisciplinary Research and Growth Evaluation (IJMRGE), 5(6), 811-816. DOI: https://doi.org/10.54660/.IJMRGE.2024.5.6.811-816

Publication Information

Journal: International Journal of Multidisciplinary Research and Growth Evaluation (IJMRGE)

Publisher: Anfo Publication House

ISSN: (Print), 2582-7138 (Online)

Frequency: Bimonthly

Language: English

Open Access: Yes - This article is distributed under the terms of the Creative Commons Attribution 4.0 International License

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